Fundamentals of Modern VLSI Devices

Fundamentals of Modern VLSI Devices

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Yuan Taur
Cambridge University Press
Edition: 2, 2013-05-02
EAN 9781107635715, ISBN10: 1107635713

Paperback, 680 pages, 24.6 x 17.3 x 3 cm
Language: English

Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices.

'For the past several years, I've taught from Taur and Ning's book because it's best at connecting advanced device physics to real world device, circuit, and system technology. The second edition updates each chapter, adds new chapters on memory and SOI, doubles the number of appendices, and contains all new homework problems. The best book of its kind is now even better.' Mark Lundstrom, Purdue University