Nanoscale MOS Transistors: Semi-Classical Transport and Applications
Cambridge University Press
Edition: Illustrated, 1/20/2011
EAN 9780521516846, ISBN10: 0521516846
Hardcover, 488 pages, 25.4 x 18.3 x 2.5 cm
Language: English
Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: • Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials • All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework • Predictive capabilities of device models, discussed with systematic comparisons to experimental results
1. Introduction
2. Bulk semiconductors and the semi-classical model
3. Quantum confined inversion layers
4. Carrier scattering in silicon MOS transistors
5. The Boltzmann transport equation
6. The Monte Carlo method for the Boltzmann transport equation
7. Simulation of bulk and SOI silicon MOSFETs
8. MOS transistors with arbitrary crystal orientation
9. MOS transistors with strained silicon channels
10. MOS transistors with alternative materials
Appendix A. Mathematical definitions and properties
Appendix B. Integrals and transformations over a finite area A
Appendix C. Calculation of the equi-energy lines with the k-p model
Appendix D. Matrix elements beyond the envelope function approximation
Appendix E. Charge density produced by a perturbation potential.
'In this comprehensive text, physicists and electrical engineers will find a thorough treatment of semiclassical carrier transport in the context of nanoscale MOSFETs. With only a very basic background in mathematics, physics, and electronic devices, the authors lead readers to a state-of-the-art understanding of the advanced transport physics and simulation methods used to describe modern transistors.' Mark Lundstrom, Purdue University