Nanostructured Semiconductors and Nanotechnology: Volume 1551 (MRS Proceedings)
Materials Research Society, 7/21/2014
EAN 9781605115283, ISBN10: 1605115282
Hardcover, 186 pages, 23.5 x 15.8 x 1.5 cm
Language: English
Symposium R, 'Nanostructured Semiconductors and Nanotechnology' was held April 1–5, 2013, at the 2013 MRS spring meeting in San Francisco, California. The aim of the symposium was to review present and future trends of research on nanostructured semiconductors from fundamental issues of synthesis (epitaxy, nanofunctionalization, and self-assembly) to emerging applications in advanced devices (nanoelectronics, photovoltaics, nanophotonics, and so on).
Part I. Nanostructuring Semiconductors
1. Role of As in the anisotropic positioning of self-assembled InAs quantum dots
2. Synthesis and compositional control of size monodisperse SixGe1-x nanocrystals for optoelectronic applications
3. Self-energy models for scattering in semiconductor nanoscale devices
causality considerations and the spectral sum rule
4. SiC-based 1D nanostructures
5. Scanning photocurrent microscopy of as-grown silicon nanowire metallurgical junctions
6. Impact of the aggressive scaling on the performance of FinFETs
the role of a single dopant in the channel
7. High energy density, high operating frequency and energy efficient on-chip inductors based on coiled carbon nanotubes (CCNTs)
8. Structural evolution of nickel doped zinc oxide nanostructures
9. Emission color tuning of Ge nanoparticles in the ranging from UV through visible to near-IR
10. Nanostructured amorphous silicon on metal electrodes
electrical and optical properties
11. Si nanowire-gold nanoparticles heterostructures for surface enhanced Raman spectroscopy
Part II. Group IV Nanostructure and Self Assembly
12. Nano-scale chemistry of complex self-assembled nanostructures in epitaxial SiGe films
13. Ab initio simulation of 1D pattern formation of adsorbates on the Ge(100)-2 × 1 surface
14. Instability formation in epitaxial SiGe lines under hydrogen annealing
Part III. Synthesis, Characterization and Transport Properties
15. Palladium catalyzed defect-free <110> zinc-blende structured InAs nanowires
16. Needles and haystacks
influence of catalytic metal nanoparticles on structural and vibrational properties and morphology of silicon nanowires synthesized by metal-assisted chemical etching
17. Improving yields in bridging silicon nanowires with rational control of the bridge characteristics
18. Effect of crystal size on the structural and functional properties of water-stable monodisperse ZnO nanoparticles synthesized via a polyol-route
19. Simulation of DC characteristics of nano-scale hydrogen-terminated diamond MISFETs
20. Electron localization, tunneling and energy spectrum for systems of double quantum dots
Part IV. Quantum Dot Based Photovoltaic Devices
21. Investigation of quantum dot solar cell device performance
22. Enhanced photocurrent due to interband transitions from InAs quantum dots embedded in InGaAs quantum well solar cells
23. Modeling and fabrication of quantum dot channel field effect transistors incorporating quantum dot gate
24. Enhanced response in InAs quantum dots in an InGaAs quantum well solar cells by anti-reflection coatings.